LDMOS versus GaN RF Power Amplifier Comparison Based on the Computing Complexity Needed to Linearize the Output
نویسندگان
چکیده
منابع مشابه
the comparative impact of prompts and recasts in processing instruction versus meaningful output-based instruction on efl learners’ writing accuracy
the purpose of the present study was to see which one of the two instruction-processing instruction (pi) and meaningful output based instruction (mobi) accompanied with prompt and recast- is more effective on efl learners’ writing accuracy. in order to homogenize the participants in term of language proficiency a preliminary english test (pet) was administrated between 74 intermediate students ...
A Si LDMOS-Based UHF Power Amplifier
1 This work was undertaken as the Electronics and Telecommunications Engineering degree Final Project of its two first authors. Abstract The design, implementation and performance tests of an Si LDMOS-Based power amplifier for UHF is presented. The amplifier, conceived for medium power GSM-900 base-station applications, consists of a Class-AB single stage circuit designed for maximum output pow...
متن کاملWiMAX Power Amplifier Design Based On Si-LDMOS
Until recently, WiMAX systems have used technology processes such as Gallium-Arsenide (GaAs) to obtain the performance needed from the RF circuits. Although these technologies provide the functional performance required by radios today, they do not support the cost/scalability business model. This paper outline the design of a power amplifier (PA) for WiMAX base station applications at 3.5GHz b...
متن کاملthe evaluation and comparison of two esp textbooks available on the iranian market for teaching english to the students of medicine
abstract this study evaluated and compared medical terminology and english for the students of medicine (ii) as two representatives of the textbooks available on the iranian market for teaching english to the students of medicine. this research was performed on the basis of a teacher’s and a number of students’ attitudes and the students’ needs analysis for two reasons: first, to investigate...
15 صفحه اولDesign of X Band High Power Amplifier MMIC Based on AlGaN/GaN HEMT
In this paper, we have presented an X band high power amplifier based on MMIC (Monolithic Microwave Integrated Circuit) technology for satellite remote sensing systems. We have used GaN HEMT process with 500 nm gate length technology with VD= 40 V and VG= -2 V in class E structure. The proposed two-stage power amplifier provides 25 dB power gain with maximum output power of 49.3 dBm at 10 GHz. ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Electronics
سال: 2019
ISSN: 2079-9292
DOI: 10.3390/electronics8111260